IndiumV3, Main, Repository, bibRecord, 002565

Si doping of MBE grown bulk GaAsSb on InP

Identifieur interne : 002565 ( Main/Repository ); précédent : 002564; suivant : 002566

Si doping of MBE grown bulk GaAsSb on InP

Auteurs : RBID : Pascal:11-0330435

Descripteurs français

Pascal (Inist)
- Addition silicium, Epitaxie jet moléculaire, Effet Hall, Densité porteur charge, Mobilité porteur charge, Arséniure de gallium, Semiconducteur III-V, Composé III-V, Mobilité électron, Dopage, Composé du gallium, GaAsSb, Substrat indium phosphure, Substrat InP, GaAs, 8115H, 8105E, 7320, 8105H.
Wicri :
- concept : Dopage.

English descriptors

KwdEn :
- Carrier density, Carrier mobility, Doping, Electron mobility, Gallium arsenides, Gallium compounds, Hall effect, III-V compound, III-V semiconductors, Molecular beam epitaxy, Silicon additions.

Abstract

In this work a detailed study of Si-doped GaAs_0.51Sb_0.49 grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Electronic characterization using Hall measurements revealed n-type behavior, although with reduced carrier concentrations and mobilities compared to GaAs, ranging from 8.5 x 10¹⁵ to 1.8 x 10¹⁸ cm^-3. Electron mobilities of up to 3120 cm²/V s at roomtemperature and 3530 cm²/V s at 140 K were determined for the lowest doping levels. The doping efficiency decreased from 52.6% at high doping levels to 13.5% for 8.5 x 10¹⁵ cm-³.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 002D86

Links to Exploration step

Pascal:11-0330435

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Si doping of MBE grown bulk GaAsSb on InP</title>
<author><name sortKey="Detz, H" uniqKey="Detz H">H. Detz</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Autriche</country>
<wicri:noRegion>1040 Wien</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Klang, P" uniqKey="Klang P">P. Klang</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Autriche</country>
<wicri:noRegion>1040 Wien</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Andrews, A M" uniqKey="Andrews A">A. M. Andrews</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Autriche</country>
<wicri:noRegion>1040 Wien</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Schrenk, W" uniqKey="Schrenk W">W. Schrenk</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Autriche</country>
<wicri:noRegion>1040 Wien</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Strasser, G" uniqKey="Strasser G">G. Strasser</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Autriche</country>
<wicri:noRegion>1040 Wien</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">11-0330435</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 11-0330435 INIST</idno>
<idno type="RBID">Pascal:11-0330435</idno>
<idno type="wicri:Area/Main/Corpus">002D86</idno>
<idno type="wicri:Area/Main/Repository">002565</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0022-0248</idno>
<title level="j" type="abbreviated">J. cryst. growth</title>
<title level="j" type="main">Journal of crystal growth</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term>
<term>Carrier mobility</term>
<term>Doping</term>
<term>Electron mobility</term>
<term>Gallium arsenides</term>
<term>Gallium compounds</term>
<term>Hall effect</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Molecular beam epitaxy</term>
<term>Silicon additions</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Addition silicium</term>
<term>Epitaxie jet moléculaire</term>
<term>Effet Hall</term>
<term>Densité porteur charge</term>
<term>Mobilité porteur charge</term>
<term>Arséniure de gallium</term>
<term>Semiconducteur III-V</term>
<term>Composé III-V</term>
<term>Mobilité électron</term>
<term>Dopage</term>
<term>Composé du gallium</term>
<term>GaAsSb</term>
<term>Substrat indium phosphure</term>
<term>Substrat InP</term>
<term>GaAs</term>
<term>8115H</term>
<term>8105E</term>
<term>7320</term>
<term>8105H</term>
</keywords>
<keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">In this work a detailed study of Si-doped GaAs<sub>0.51</sub>
Sb<sub>0.49</sub>
 grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Electronic characterization using Hall measurements revealed n-type behavior, although with reduced carrier concentrations and mobilities compared to GaAs, ranging from 8.5 x 10<sup>15</sup>
 to 1.8 x 10<sup>18</sup>
 cm<sup>-3</sup>
. Electron mobilities of up to 3120 cm<sup>2</sup>
/V s at roomtemperature and 3530 cm<sup>2</sup>
/V s at 140 K were determined for the lowest doping levels. The doping efficiency decreased from 52.6% at high doping levels to 13.5% for 8.5 x 10<sup>15</sup>
 cm-<sup>3</sup>
.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0>
</fA01>
<fA02 i1="01"><s0>JCRGAE</s0>
</fA02>
<fA03 i2="1"><s0>J. cryst. growth</s0>
</fA03>
<fA05><s2>323</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Si doping of MBE grown bulk GaAsSb on InP</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>DETZ (H.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>KLANG (P.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>ANDREWS (A. M.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>SCHRENK (W.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>STRASSER (G.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>GEELHAAR (Lutz)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>HEYN (Christian)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>WIECK (Andreas D.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Center for Micro- and Nanostructures and Institute for Solid-State Electronics, Vienna University of Technology, Floragasse 7</s1>
<s2>1040 Wien</s2>
<s3>AUT</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Paul-Drude-Institut für Festkörperelektronik</s1>
<s2>Berlin</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of Hambourg</s1>
<s3>DEU</s3>
<sZ>2 aut.</sZ>
</fA15>
<fA15 i1="03"><s1>University of Bochum</s1>
<s3>DEU</s3>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>42-44</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13507</s2>
<s5>354000190370280100</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2011 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>18 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>11-0330435</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>In this work a detailed study of Si-doped GaAs<sub>0.51</sub>
Sb<sub>0.49</sub>
 grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Electronic characterization using Hall measurements revealed n-type behavior, although with reduced carrier concentrations and mobilities compared to GaAs, ranging from 8.5 x 10<sup>15</sup>
 to 1.8 x 10<sup>18</sup>
 cm<sup>-3</sup>
. Electron mobilities of up to 3120 cm<sup>2</sup>
/V s at roomtemperature and 3530 cm<sup>2</sup>
/V s at 140 K were determined for the lowest doping levels. The doping efficiency decreased from 52.6% at high doping levels to 13.5% for 8.5 x 10<sup>15</sup>
 cm-<sup>3</sup>
.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B80A15H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B80A05H</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C20</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Addition silicium</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Silicon additions</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Effet Hall</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Hall effect</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Densité porteur charge</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Carrier density</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Mobilité porteur charge</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Carrier mobility</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Arséniure de gallium</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Mobilité électron</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Electron mobility</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Dopage</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Doping</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Doping</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Composé du gallium</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium compounds</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>GaAsSb</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Substrat indium phosphure</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Substrat InP</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>8115H</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>8105E</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>7320</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>8105H</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>227</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>MBE 2010 International Conference on Molecular Beam Epitaxy</s1>
<s2>16</s2>
<s3>Berlin DEU</s3>
<s4>2010-08-22</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Main/Repository

HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 002565 | SxmlIndent | more

HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 002565 | SxmlIndent | more

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Main
   |étape=   Repository
   |type=    RBID
   |clé=     Pascal:11-0330435
   |texte=   Si doping of MBE grown bulk GaAsSb on InP
}}

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024

	Serveur d'exploration sur l'Indium
	Attention, ce site est en cours de développement ! Attention, site généré par des moyens informatiques à partir de corpus bruts. Les informations ne sont donc pas validées.

Serveur d'exploration sur l'Indium

Si doping of MBE grown bulk GaAsSb on InP

Si doping of MBE grown bulk GaAsSb on InP

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri